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Effects of hydrogen dilution ratio on properties of Boron-doped germanium films by hot-wire chemical vapor deposition

H. HUANG1, H. SHEN1,* , L. ZHANG1, T. WU1, L. LU1, Z. TANG1, J. SHEN2

Affiliation

  1. College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing, 211100, China
  2. National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing, 210093, China

Abstract

Boron-doped (B-doped) hydrogenated micro-crystallized Ge films (μc-Ge:H) with different hydrogen dilution ratio (D H) were prepared by hot-wire chemical vapor deposition (HWCVD) at a substrate temperature of 200  to investigate the impact of DH on properties of the films. Properties of the samples were studied with XRD, Raman spectroscopy, Fourier transform infrared spectrometer, Hall effects with Van der Pauw method and reflection spectroscopy. It is found that the increase of D H improves the structural properties of B-doped μc-Ge:H films, reduces residual stress and enhances the preferential growth of Ge(220). DH has a great effect on B-doping efficiency and reflectivity in near infrared waveband of the films. The lower D H, the higher B-doping efficiency and reflectivity are..

Keywords

Hydrogen dilution ratio, Boron doping, μc-Ge:H, Hot-wire chemical vapor deposition.

Submitted at: Oct. 30, 2009
Accepted at: Nov. 19, 2009

Citation

H. HUANG, H. SHEN, L. ZHANG, T. WU, L. LU, Z. TANG, J. SHEN, Effects of hydrogen dilution ratio on properties of Boron-doped germanium films by hot-wire chemical vapor deposition, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1769-1772 (2009)