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Effects of nitrous oxide and nitrogen plasma treatment on the indium-tin-oxide anode of organic light-emitting diodes

SHIHUA HUANG1, KUNHUA WEN1,* , XIN WANG1, DEPING XIONG1, MIAO HE1,*

Affiliation

  1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

Abstract

In this paper, the surface of the indium-tin-oxide (ITO) anode of an organic light-emitting diodes (OLED) device is processed by N2O or N2 gas in a plasma enhanced chemical vapor deposition (PECVD) instrument. Compared to the non-treated OLED device, the process through the N2O plasma improves the characteristics of OLED device, while opposite effect will be achieved by using the N2 plasma. Under the optimized experimental condition, the turn-on voltage of the N2O plasma treated OLED (4.5 V) is lower than that of the OLED without plasma process (6V). In addition, the luminance of the OLED with its ITO anode surface treated by the N2O plasma is improved to 8500 cd/m2, and is higher than 6200 cd/m2 of the untreated OLED..

Keywords

OLEDs, Plasma, ITO, N2O, N2.

Submitted at: Nov. 8, 2018
Accepted at: Aug. 20, 2019

Citation

SHIHUA HUANG, KUNHUA WEN, XIN WANG, DEPING XIONG, MIAO HE, Effects of nitrous oxide and nitrogen plasma treatment on the indium-tin-oxide anode of organic light-emitting diodes, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 7-8, pp. 511-517 (2019)