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Electrical and dielectrical properties of As – Se – Te glasses

M. KUBLIHA1, J. KALUŽNÝ1,* , J. PEDLIKOVÁ2, J. ZAVADIL3, V. LABAŠ1,*

Affiliation

  1. Institute of Materials, Faculty of Material Science and Technology of the Slovak University of Technology, Paulínska 16, 917 24 Trnava, Slovakia
  2. Laboratory of Inorganic Materials, Institute of Inorganic Chemistry, Academy of Sciences of the Czech Republic, 250 68 Řeř u Prahy, Czech Republic
  3. Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic, Chaberská 57, 18251 Praha 8, Czech Republic

Abstract

There were measured temperature dependencies of the direct electrical conductivity as well as temperature and frequency dependencies of the complex electrical modulus for the pure As – Se - Te glasses and those doped by the rare earth (RE3+), too. It is clear analyzing the measured dependencies that the mentioned glasses own only one mechanism of the electrical conductivity (type P), with the activation energy U = (0.80 ± 0.05) eV. The gained results of the complex modulus and its compounds make possible to state that the searched glasses are mono-phase but they contain the certain amount of the physical defects. The glasses are the temperature stable up to 160 °C..

Keywords

Chalcogenide glasses, Electrical conductivity, Complex electrical modulus.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

M. KUBLIHA, J. KALUŽNÝ, J. PEDLIKOVÁ, J. ZAVADIL, V. LABAŠ, Electrical and dielectrical properties of As – Se – Te glasses, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3082-3087 (2007)