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Electrical characteristics of nano-PbS/SiO2/Si heterostructures obtained by chemical bath method

A. GOLDENBLUM1,* , V. STANCU1, M. BUDA1, G. IORDACHE1, T. BOTILA1, C. NEGRILA1

Affiliation

  1. National Institute of Materials Physics, Atomistilor Str. 111, Bucharest-Magurele, Romania

Abstract

The PbS/SiO2/Si structures show a clockwise hysteresis of capacitance-voltage (C-V) characteristics. The loop width increases with temperature and sweep time. The conductance-voltage (G-V) characteristics also present a hysteresis effect with two bumps. Both characteristics show a strong shift with frequency . We show that these effects are determined by the positive mobile ions injected in the oxide region during the chemical bath deposition of PbS and by the high concentration of Si/SiO2 interface states. The corresponding C-V and G-V characteristics are simulated and the main peculiarities of the experimental results are well reproduced by the modeled curves..

Keywords

Semiconductor devices, Electrical characteristics, Hysteresis.

Submitted at: Nov. 30, 2007
Accepted at: Dec. 7, 2007

Citation

A. GOLDENBLUM, V. STANCU, M. BUDA, G. IORDACHE, T. BOTILA, C. NEGRILA, Electrical characteristics of nano-PbS/SiO2/Si heterostructures obtained by chemical bath method, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 12, pp. 3795-3802 (2007)