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Electrical characterization of a Schottky diode based on organic semiconductor film

R. H. AL ORAINY1,*

Affiliation

  1. Physics Department, Sciences of Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia

Abstract

The organic Schottky diode of fluorescein sodium salt using aluminium and gold metals were fabricated. Electronic and interface state properties of the Al/p-FSS Schottky diode were investigated by current-voltage and capacitance-voltage analyses. The electronic parameters such as barrier height (b=0.72 eV), ideality factor (n=3.05) and series resistance (7.73 b(C-V) value obtained capacitance-voltage measurements is 1.05 eV . The barrier height obtained from the C-V measurements is higher than that of obtained from the I-V measurements. The difference between b(I-V) and b(C-V) barrier height values can be due to interfacial layer, excess capacitance and barrier inhomogenity. The ideality factor confirms that the Al/p-FSS device is a metal insulator- semiconductor Schottky diode. The shape of the density distribution of the interface states is in the range of ESS-0.02 eV to ESS-1.21 eV. (Received September 04,.

Keywords

Schottky diode, Interfacial state density, Series resistance, Organic semiconductor.

Submitted at: Sept. 4, 2013
Accepted at: July 10, 2014

Citation

R. H. AL ORAINY, Electrical characterization of a Schottky diode based on organic semiconductor film, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 7-8, pp. 793-797 (2014)