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Electrical characterization of MOS structures with 10 nm SiO2, thermally grown on plasma hydrogenated (100)-pSi

E. HALOVA1,* , S. ALEXANDROVA2

Affiliation

  1. Technical University, 8 Kl. Ohridski Blvd., Sofia 1797, Bulgaria
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

In this paper, we have focused on the electrical properties of the SiO2/p-type Si(100) interface, where the thin silicon oxide layer was thermally grown on rf plasma-hydrogenated silicon structures. The results concerning the interface properties of the MOS structures are reported from a detailed study of the C-V and G-V characteristics at varying frequencies between 500 Hz and 300 kHz. From frequency characterization, information is gained on the charged defects at the Si/SiO2 interface. The frequency dispersion properties reveal the presence of either interface traps or a laterally inhomogeneous distribution of defect centres within the oxide near the interface Si/SiO2. From frequency characterization information is gained on the concentration of charged defects, and their location in the Si/SiO2 interface region. A procedure is suggested to overcome the problem with the usually observed increase in the leakage through the oxide on p-Si, which hinders the accurate determination of the interface trap densities even in thicker oxides. We have studied and compared the effect of a rf hydrogen plasma on the silicon structures. The amount and nature of the defects depend on the substrate temperature during plasma exposure, and on the Si orientation..

Keywords

Thermal SiO2, Plasma hydrogenation, Interface charges.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

E. HALOVA, S. ALEXANDROVA, Electrical characterization of MOS structures with 10 nm SiO2, thermally grown on plasma hydrogenated (100)-pSi, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 402-405 (2007)