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Electrical characterization of ZnO/organic semiconductor diode

Y. CAGLAR1, F. YAKUPHANOGLU2, S. ILICAN1,* , M. CAGLAR1

Affiliation

  1. Anadolu University, Faculty of Sciences, Department of Physics, 26470 Eskisehir, Turkey
  2. Firat University, Faculty of Arts and Sciences, Department of Physics, 23169 Elazig, Turkey

Abstract

The electrical characterization of IZO/FSS/Al diode has been investigated current-voltage method. The ideality factor of the diode was found to be 2.84, which confirm that the IZO/FSS/Al device indicates a non-ideal I-V behaviour. The effect of series resistance was evaluated using a method developed by Cheung. The RS and n values were determined from the dV/dln(I)-I plot and were found to be 8.00 kΩ and 2.84, respectively. The barrier height and Rs values were calculated from H(I)-I plot and were found to be 0.86 eV and 7.83 kΩ At higher voltages, I-V characteristics of the diode are affected by the electrical properties. This suggests that at higher voltages, the current flow in the diode is controlled by the space limited current mechanism..

Keywords

Inorganic/organic semiconductor diode, Series resistance.

Submitted at: May 20, 2008
Accepted at: Oct. 7, 2008

Citation

Y. CAGLAR, F. YAKUPHANOGLU, S. ILICAN, M. CAGLAR, Electrical characterization of ZnO/organic semiconductor diode, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2584-2587 (2008)