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Electrical conduction mechanism and dielectric properties of vanadium doped ZnTe thin films

M. S. HOSSAIN1,* , R. ISLAM2, K. A. KHAN2

Affiliation

  1. Departments of Physics, Rajshahi University of Engineering & Technology (RUET), Rajshahi-6204, Bangladesh
  2. Departments of Applied Physics & Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh

Abstract

ZnTe:V (contains 2.5 to 10wt% V) thin films with various thicknesses have been prepared onto glass substrate by e-beam technique at a pressure ~8×10-4 Pa. The dc conductivity σdc, indicates a thermally activated carrier hopping; it increases with increasing temperature. Ac conductivity σac(ω), of the prepared thin films has been measured in the frequency range 0.04 to 104 kHz, over the temperature range 303 to 383 K, respectively. Obtained data reveal that σac(ω) obey the relation, σac(ω) = AωS and the exponent S is found to decrease by increasing temperature. The values of S of the investigated thin films lie between 0.57 ≤ S ≤ 0.91. The obtained experimental results of ac conductivity have been analyzed with reference to various theoretical models. The analysis shows that the correlated barrier-hopping (CBH) model is the dominant conduction mechanism for the electron transport in the vanadium doped ZnTe films. Application of the CBH model reveals that the electronic conduction takes place via bipolaron or mixed polaron hopping process in the whole temperature range of the study. Both the dielectric constant and dielectric loss showed a decrease with increasing frequency while they increased with increasing temperature..

Keywords

ZnTe:V thin films, E-beam technique, Electrical conduction mechanism, Dielectric properties.

Submitted at: May 18, 2007
Accepted at: July 15, 2007

Citation

M. S. HOSSAIN, R. ISLAM, K. A. KHAN, Electrical conduction mechanism and dielectric properties of vanadium doped ZnTe thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 7, pp. 2192-2199 (2007)