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Electrical conductivity measurements in Ge2Sb2Te5 films

N. QAMHIEH1,* , H. GHAMLOUCHE1, S. T. MAHMOUD1, H. AL-SHAMISI1, S. AHMAD1

Affiliation

  1. United Arab Emirates University, Department of Physics, P.O. Box 17551 Al-Ain, United Arab Emirates

Abstract

Thin films of Ge2Sb2Te5 were prepared using thermal evaporation technique. The amorphous structure and stoichiometery of the films were identified by X-ray diffraction and Energy Dispersive X-ray analysis, EDX. The conductivity measurements were carried out using DC I-V curves and AC Impedance spectroscopy techniques. The measured activation energy (Ev) is found to be about 0.36–0.39 eV, respectively, which is approximately half the energy gap (Eg= 0.72–0.78 eV). The amorphous-crystalline transition temperature (Tc) of the films was also estimated to be 135oC. The results can be reserved as an evidence for the chalcogenide nature defects in Ge2Sb2Te5 films..

Keywords

Chalcogenides, Impedance spectroscopy, Conductivity, Phase change materials, Activation energy, Relaxation frequency.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

N. QAMHIEH, H. GHAMLOUCHE, S. T. MAHMOUD, H. AL-SHAMISI, S. AHMAD, Electrical conductivity measurements in Ge2Sb2Te5 films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3157-3160 (2007)