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Electrical properties of (a-C:H)/Si and (a-C:H)/Ti heterostructures

S. TINCHEV1, Y. DYULGERSKA1, P. NIKOLOVA1,* , S. ALEXANDROVA2, E. VALCHEVA3

Affiliation

  1. Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Physics Department, Sofia University, 5 J. Baucher, 1164 Sofia, Bulgaria

Abstract

Hydrogenated amorphous carbon (a-C:H) is a semiconductor with a band gap which can be easily varied between approximately 1 eV and 2.2 eV. Therefore this material is interesting for electronic applications. We report here the results of our investigation of the electrical properties of (a-C:H)/Si and (a-C:H)/Ti heterostructures. Thin films of hydrogenated amorphous carbon were made by plasma enhanced chemical vapor deposition (PECVD) from benzene. Electrical contacts were deposited by DC magnetron sputtering. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the heterostructures were measured. The (a-C:H)/Ti heterostructure did not manifest Schottky contact behavior. The (a-C:H)/Si structure with a Ti electrode behaved like a p-n junction, but at higher voltages the current increase was limited by the bulk resistance of the a-C:H film..

Keywords

Hydrogenated amorphous carbon, Electrical properties, Heterostructures.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

S. TINCHEV, Y. DYULGERSKA, P. NIKOLOVA, S. ALEXANDROVA, E. VALCHEVA, Electrical properties of (a-C:H)/Si and (a-C:H)/Ti heterostructures, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 386-389 (2007)