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I agree, do not show this message again.Electrical properties of n-Si /Cu Schottky diodes formed by electrodeposition
M. AHMETOGLU (AFRAILOV)1,* , M. ALPER1, M. SAFAK1, K. ERTURK1, B. GURPINAR1, F. KOCAK1, C. HACIISMAILOGLU1
Affiliation
- Department of Physics, Uludag University, 16059, Görukle, Bursa, Turkey
Abstract
In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n- Si (111) from 0.2 M CuSO4 .5H2O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si /Cu diode current-voltage characteristics display low reverse- bias leakage currents and average barrier heights of 0.59 ± 0.02 eV and 0.67 ± 0.02 eV obtained from both I −V and C −V measurements at room temperature, respectively..
Keywords
Electrodeposition, Schottky diodes, Electrical properties.
Submitted at: Nov. 2, 2006
Accepted at: April 15, 2007
Citation
M. AHMETOGLU (AFRAILOV), M. ALPER, M. SAFAK, K. ERTURK, B. GURPINAR, F. KOCAK, C. HACIISMAILOGLU, Electrical properties of n-Si /Cu Schottky diodes formed by electrodeposition, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 4, pp. 818-821 (2007)
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