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Electrically active defect centers in MOS structures with nanosized SiO2 thermally grown on plasma hydrogenated silicon

S. ALEXANDROVA1,* , A. SZEKERES2, E. VALCHEVA3, E. VLAIKOVA2

Affiliation

  1. Department of Applied Physics, Technical University, 8 Kl. Ohridski Blvd., 1797 Sofia, Bulgaria
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Department of Solid State Physics and Microelectronics, Sofia University, 1164 Sofia, Bulgaria

Abstract

This paper presents results on the characterization of the electrically active interface defect centers in Si/SiO2 structures formed on Si wafers exposed to a rf hydrogen plasma. The aim is to achieve hydrogenation of the Si near-surface and, possibly, a low defect concentration due to hydrogen termination of unsaturated bonds. During plasma treatment the Si wafers could be heated up to 300oC. The 9 nm SiO2 layer was formed by thermal oxidation at a reduced temperature of 850oC, according to the contemporary requirements of the technology. For investigations, multiple frequency C-V and G-V measurement techniques were applied. The presence of single defects with different energy levels in the Si bandgap was established in oxides on plasma cleaned Si. The role of the Si substrate hydrogenation is to bring about a more ordered interface region..

Keywords

MOS structures, Hydrogenation, Hydrogen plasma, Oxidation, Electrical characteristics.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

S. ALEXANDROVA, A. SZEKERES, E. VALCHEVA, E. VLAIKOVA, Electrically active defect centers in MOS structures with nanosized SiO2 thermally grown on plasma hydrogenated silicon, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 398-401 (2007)