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Electroabsorption in chalcogenide glasses and its explanation based on barrier-cluster model

I. BANÍK1,*

Affiliation

  1. Slovak University of Technology, Faculty of CE, Department of Physics, Radlinského 11, 813 68 Bratislava, Slovak Republic

Abstract

The article deals with an explanation of electroabsorbtion in chalcogenide glasses based on a barrier-cluster model of glass. The model assumes that the structure of chalcogenide glass consists of closed clusters with a potential barrier existing in between. The barrier essentially influences not only electrical transport in glass, but also optical characteristics of the material. The absorption of light in the region of the optical absorption edge is usually connected with tunneling of carriers through the potential barrier. Due to this, the absorption process is influenced by barriers. According to the barrier-cluster model a strong electric field increases the probability of tunneling process and, thus, the value of the absorption coefficient as well. This is the essence of the explanation of electroabsorption on the base of a barrier-cluster model..

Keywords

Electroabsorption, Absorption, Chalcogenide glass, Cluster, Barrier-cluster model, Non-crystalline, Semiconductor, Amorphous.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

I. BANÍK, Electroabsorption in chalcogenide glasses and its explanation based on barrier-cluster model, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3171-3176 (2007)