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Electron Raman scattering in Hg1-xCdxTe with inverted band structure

S. I. ZEYNALOVA1,2,* , T. H. ISMAYILOV2

Affiliation

  1. Institute of Physics of the Ministry of Science and Education of the Republic of Azerbaijan, Baku, Azerbaijan
  2. Baku State University, Baku, Azerbaijan

Abstract

The interband electronic Raman scattering (IERS) for Hg1-xCdxTe with the inverted band structure within the framework of the two-band Kane model is considered. The calculations of the differential effective cross section (DECS) are made. DECS for XX polarizations of incident and scattered radiation are calculated and its dependences on the frequency shift and “band-gap” ε_g is obtained. A number of general features of the scattering process and the resulting Raman spectrum are examined. The non-resonant and resonant cases are considered. In both cases, the dependences of DECS on the frequency shift are plotted for various values of the band gap..

Keywords

Electronic Raman scattering, Kane model, Zero-gap semiconductor Hg1-xCdxTe.

Submitted at: Feb. 26, 2024
Accepted at: July 30, 2024

Citation

S. I. ZEYNALOVA, T. H. ISMAYILOV, Electron Raman scattering in Hg1-xCdxTe with inverted band structure, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 7-8, pp. 335-340 (2024)