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Electronic polaron of the AlN/GaN/AlN double nanoheterostructure of hexagonal symmetry crystals

V. I. BOICHUK1, V. A. BORUSEVYCH1,* , I. S. SHEVCHUK1

Affiliation

  1. Department of Theoretical Physics, Ivan Franko Drohobych State Pedagogical University, 24 Ivan Franko Str., Drohobych 82100, Ukraine

Abstract

A theoretical study of the polaron dispersion relation in the GaN crystal and AlN/GaN/AlN double nanoheterostructure is presented. Every type of polarization oscillation with which an electron interacts is taken into account. Calculations are performed in the framework of an infinite and a finite band gap models. It is shown that with the nanofilm thickness increase, a contribution of the interface phonon in the polaron energy decreases, while that of the confined phonons gains in value. The calculation results of the polaron dispersion relation in the region of k < kf in different polaron wave-vector directions with respect to the c-axis of the crystal are given. Also, the polaron average speed and effective mass are calculated. The results suggest an effective enhancement of the electron-phonon interaction with lowering of the system dimensions number..

Keywords

Quantum dot, Polaron, Perturbation theory, Nanoheterostructure, Variation method.

Submitted at: May 5, 2008
Accepted at: June 9, 2008

Citation

V. I. BOICHUK, V. A. BORUSEVYCH, I. S. SHEVCHUK, Electronic polaron of the AlN/GaN/AlN double nanoheterostructure of hexagonal symmetry crystals, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 6, pp. 1357-1364 (2008)