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Electronic states properties in GaN/AlxGa1-xN heterostructures with graded interfaces

S. DIMITROV1,* , E. VALCHEVA1, V. DONCHEV1

Affiliation

  1. Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria

Abstract

AlGaN/GaN multiple quantum wells (MQWs) are common building blocks for the active regions of UV light emitting diodes. In this work we have studied the influence of well width fluctuations on the bound state energy levels in GaN/AlGaN QW. We studied the influence of the interface roughness and the electric charge due to the internal polarization fields..

Keywords

Well width fluctuation, Discrete energy levels, Computer simulation, PL peak splitting.

Submitted at: Nov. 1, 2006
Accepted at: Jan. 15, 2007

Citation

S. DIMITROV, E. VALCHEVA, V. DONCHEV, Electronic states properties in GaN/AlxGa1-xN heterostructures with graded interfaces, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 1, pp. 194-196 (2007)