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S. DLIMI1,* , A. EL KAAOUACHI1, A. NARJIS2, L. LIMOUNY2, A. SYBOUS2, M. ERRAI2, G. BISKUPSKI3
- Research Group ESNPS , Physics department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco.
- Research Group ESNPS , Physics department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- Laboratoire de Spectroscopie Hertzienne (CNRS), équipe des semi-conducteurs, Université des Sciences et Technique de Lille I, F 59655 Villeneuve d’Ascq Cédex, France.
We investigated the temperature dependence of resistivity in the absence of the magnetic field near the metal-insulator transition of a high mobility of holes system in two dimensions grown on the (311) surface GaAs. We provide evidence of correlated hopping by observing the low Coulomb energy TES and the concomitantly smaller than predicted CES in singleelectron hopping picture. Even in the presence of multi-electron hopping, single-particle scaling form is maintained. Hence, we use the scaling form to manifest the crossover between Coulomb hopping and screened Mott hopping. The consequence of correlated hopping is that electrons in localized states hop collectively when the interaction is strong enough and that the collective behavior leads to the transport with a lower hopping amplitude than the one estimated from direct tunneling measurements. The localization length diverges as power law when the hole density approaches a critical value. Indeed, we see that the inverse of the localization length follows a power law with the critical exponent consistent with the percolation theory..
Metal-insulator transition, Percolation, Hopping energy, Coulomb hopping.
Submitted at: Sept. 28, 2013
Accepted at: Nov. 7, 2013
S. DLIMI, A. EL KAAOUACHI, A. NARJIS, L. LIMOUNY, A. SYBOUS, M. ERRAI, G. BISKUPSKI, Evidence for the correlated hopping mechanism in p- GaAs near the 2D MIT AT B=0T, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 11-12, pp. 1222-1227 (2013)
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