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Excitation and luminescence mechanisms of Er3+ centers in GeGaSe chalcogenide glasses

T. AOKI1,* , D. SAITOU1, S. KOBAYASHI1, C. FUJIHASHI1, K. SHIMAKAWA2, K. KOUGHIA3, M. MUNZAR3, S. O. KASAP3

Affiliation

  1. Graduate School of Electronics, Joint Research Center of High-technology, Tokyo Polytechnic University, Atsugi 243-0297, Japan
  2. Department of Electrical and Electronic Engineering, Gifu University, Gifu 501-1193, Japan
  3. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9, Canada

Abstract

Wideband quadrature frequency resolved spectroscopy (QFRS) of photoluminescence (PL) from 2 ns to 160 s reveals significantly different lifetime distributions between undoped and Er-doped GeGaSe chalcogenide glasses (ChGs). The QFRS of the undoped GeGaSe ChGs exhibits a triple-peak lifetime distribution. The two short-time peaks are associated with the singlet-triplet excitons, and the third peak, at much longer lifetimes, τH ≈ 20 s, is associated with radiative tunneling recombination at low temperatures, similar to other amorphous semiconductors. The QFRS of the Er-doped GeGaSe ChGs exhibits a double-peak lifetime distribution, consisting of a peak at τEr ≈ 3 ms, a characteristic of the Er3+ luminescent center, and another peak at τH ≈ 20 s, even at room temperature. We report detailed QFRS measurements as a function of temperature T, PL emission energy ħω and PL excitation energy EX, and discuss the results in terms of possible mechanisms for the origin of the individual lifetime components for the undoped and Er-doped GeGaSe ChGs..

Keywords

PL, QFRS, Lifetime, Slow luminescence, Thermal quenching.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

T. AOKI, D. SAITOU, S. KOBAYASHI, C. FUJIHASHI, K. SHIMAKAWA, K. KOUGHIA, M. MUNZAR, S. O. KASAP, Excitation and luminescence mechanisms of Er3+ centers in GeGaSe chalcogenide glasses, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3143-3148 (2007)