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Fabrication and characterization of ZnO-based ultra-violet photoconductor and photodetector



  1. Department of Electronics and Communication Engineering, Thapar University, Patiala-147001, India


In this paper, ZnO thin films were deposited on p-type Si substrate and glass substrate using RF sputtering method. Their structural and optical properties were investigated systematically by X-ray diffractometer (XRD), atomic force microscopy (AFM) and ellipsometer respectively. The XRD spectra reveal that ZnO films exhibit wurtzite structure with orientation along (002) plane. The AFM image shows that ZnO thin films exhibit uniform grain with smooth surface. The current-voltage (I-V) of Al/ZnO/Al photoconductor and Pd:Au/ZnO/AL photodiode were measured and studied in the dark condition and in the presence of ultra-violet (UV) rays. This work shows the example of fabricating a low-cost and good quality ZnO based photoconductor and photodiode for UV ray detection in the optoelectronic application..


RF-sputtering, Photo-detector, Photoconductor, ZnO, UV detection.

Submitted at: Jan. 25, 2017
Accepted at: Nov. 28, 2017


SUMIT VYAS, Fabrication and characterization of ZnO-based ultra-violet photoconductor and photodetector, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 11-12, pp. 704-708 (2017)