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Fractal growth of amorphous silicon crystallization induced by aluminum

ZHENGXIA TANG1, HONGLIE SHEN1,* , HAIBIN HUANG1, LINFENG LU1, HONG CAI1, JIANCANG SHEN2

Affiliation

  1. College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing, 211100, China
  2. National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing, 210093, China

Abstract

Glass/Al(370nm)/Al 2O 3 /a-Si(600nm) stack was prepared by radio frequency magnetron sputtering and naturally oxidation. The samples were annealed at 500 for 7 hours. After annealing, double-layered polycrystalline silicon (poly-Si) thin film was obtained. The upper layer is a continuous thin film and the lower layer consists of discontinuous dendritic crystalline grains. The fractal dimension of the dendritic crystalline grains is 1.86. Raman spectra show that the dendritic grain has high crystal quality close to single c-Si wafer..

Keywords

Aluminum-induced crystallization; Polycrystalline silicon; Double layers; Fractal dimension.

Submitted at: Aug. 31, 2009
Accepted at: Nov. 19, 2009

Citation

ZHENGXIA TANG, HONGLIE SHEN, HAIBIN HUANG, LINFENG LU, HONG CAI, JIANCANG SHEN, Fractal growth of amorphous silicon crystallization induced by aluminum, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1651-1655 (2009)