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Gaussian distribution of inhomogeneous Barrier Height in Au/n-GaP (100) Schottky Barrier diodes

M. ÖZER1, T. GÜZEL1, A. ASIMOV2, M. AHMETOGLU (AFRAİLOV)2,*

Affiliation

  1. Physics Department, Faculty of Arts and Sciences, Gazi University,Teknikokullar, 06500 Ankara, Turkey
  2. Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059Gorukle, Bursa, Turkey

Abstract

The current–voltage (I–V) measurements of Au/n-GaP Schottky barrier diodes (SBD) were carried out in the temperature range of 80–375 K. The values of zero-bias barrier height ( ) and ideality factor ( ) ranged from 0.29 eV and 3.85 (80K) to 0.82 eV and 1.16 (375K), respectively. Such behavior of and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian Distribution (GD) of barrier hights (BHs) at Au/n-GaP interface. The vs plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights,and values of = 0,97 eV and = 0.10 V for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. Thus a modified ln (I0/T 2) - q2 2  o /2k2T 2vs 1000/T plot has given mean barrier height and Richardson constant ( ) as 1.95 eV and 0.054 A cm-2 K-2, respectively. The temperature dependence of the I–V characteristics of the Au/n-GaP Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with GD of the Schottky barrier heights (SBHs)..

Keywords

Schottky contacts, Schottky Barrier Height, Gaussian Distribution Inhomogeneities.

Submitted at: Aug. 26, 2013
Accepted at: May 15, 2014

Citation

M. ÖZER, T. GÜZEL, A. ASIMOV, M. AHMETOGLU (AFRAİLOV), Gaussian distribution of inhomogeneous Barrier Height in Au/n-GaP (100) Schottky Barrier diodes, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 5-6, pp. 606-611 (2014)