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Ge dots embedded in silicon dioxide using sol-gel deposition

T. F. STOICA1,* , M. GARTNER2, V. S. TEODORESCU1, T. STOICA1

Affiliation

  1. National Institute of Materials Physics, P.O. Box Mg. 7, 76900 Bucharest, Magurele, Romania
  2. Institute of Physical Chemistry of the Romanian Academy of Sciences, Splaiul Independentei 202, 77208 Bucharest, Romania

Abstract

A versatile method, that of sol-gel deposition was used to produce Si1-xGexO2 films on Si substrates. Samples after annealing at different temperatures are investigated by different techniques including high-resolution transmission electron microscopy and spectral ellipsometry. It was revealed that, by annealing at high temperatures, Ge accumulates in small clusters (5-10nm) inside of the oxide layer. By ellipsometric investigations, valuable data about the temperature evolution of the composition and optical constants were obtained..

Keywords

Silicon dioxide, Ge dots, Sol-gel deposition.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

T. F. STOICA, M. GARTNER, V. S. TEODORESCU, T. STOICA, Ge dots embedded in silicon dioxide using sol-gel deposition, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3271-3274 (2007)