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Germanium solar cells prepared by ion implantation

ISMAIL KABACELIK1,* , RASIT TURAN2,3,4

Affiliation

  1. Department of Physics, Faculty of Sciences, Akdeniz University, Campus 07058, Antalya, Turkey
  2. Department of Physics, Middle East Technical University, Dumlupınar Bulvarı, No : 1, 06800, Ankara, Turkey
  3. The Center for Solar Energy Research and Applications (GÜNAM), Middle East Technical University, Dumlupınar Bulvarı, No: 1, 06800, Ankara, Turkey
  4. Micro and Nanotechnology Graduate Program, Middle East Technical University, Dumlupınar Bulvarı, No : 1, 06800, Ankara, Turkey

Abstract

Development of Ge solar cells for multijunction solar cells, where the p-n junction is formed by ion implantation is investigated. Ge samples are doped by phosphorus (P) ions having 60 keV energy at dose ratios of 1x1013, 1x1014, 1x1015 ve 1x1016 ions/cm2 at room temperature. The influences of P concentration and activation temperature on Ge solar cells is investigated. P concentration and layer resistance are measured by secondary ion mass spectrometry (SIMS) and a 4- point probe, respectively. Layer resistances of Ge samples are observed to vary as a function of concentration and temperature. The short circuit currents (Isc) and open circuit voltages (Voc) of the Ge solar cells is compared through examination of the I-V curves of the cells with respect to concentration and temperature. Besides, α-Si thin films are introduced as anti-reflection coatings (ARCs) via DC sputtering method and the impact of ARCs on Isc and Voc is investigated. The ARCs is observed to increase the Isc’s of all four samples with respect to uncoated samples..

Keywords

Germanium, Ion-implantation, Solar cell.

Submitted at: July 29, 2013
Accepted at: Sept. 18, 2013

Citation

ISMAIL KABACELIK, RASIT TURAN, Germanium solar cells prepared by ion implantation, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 9-10, pp. 948-953 (2013)