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Giant photoinduced effects in films from the Ge2S3-AsS3 system

D. ARSOVA1, K. BEEVA2, E. VATEVA1,* , V. PAMUKCHIEVA1, K. BEEV2, S. SAINOV2

Affiliation

  1. Georgi Nadjaiov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Central Laboratory of Optical Storage and Processing of Information, Bulgarian Academy of Sciences, “Acad. G. Bonchev” str., Bl.101 PObox 95, 1113 Sofia, Bulgaria

Abstract

The photo- and thermoinduced changes in the optical band gap (Eg) and thickness (d) of films from the Ge2S3-AsS3 system as well as their dependence on the decrease of the film thickness are studied. It is found that the irreversible photobleaching (PB), which reaches giant values up to ~27% accompanied with photoexpansion ~11% in 600 nm films, do not disappear at the decrease of d down to 95-100 nm. The values of the reversible photodarkening (ΔEg ≈ 220 meV in some compositions) depend on the annealing temperature (Tann). The reversible photodarkening decreases with decreasing Tann and a conversion into reversible PB is observed at low Tann. The appearance only of reversible PB in ~100 nm films from the studied system after annealing up to the highest Tann is discussed. Possibilities for recording of holographic gratings are shown..

Keywords

Chalcogenide thin films, Photoinduced changes, Optical properties.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

D. ARSOVA, K. BEEVA, E. VATEVA, V. PAMUKCHIEVA, K. BEEV, S. SAINOV, Giant photoinduced effects in films from the Ge2S3-AsS3 system, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3115-3118 (2007)