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Growth and characterization of In2O3 thin films prepared by pulsed laser deposition

R. K. GUPTA1,* , N. MAMIDI1, K. GHOSH1, S. R. MISHRA2, P. K. KAHOL1

Affiliation

  1. Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, Missouri-65897, USA
  2. Department of Physics, The University of Memphis, Memphis, TN 38152-6670, USA

Abstract

The effect of growth temperature and oxygen partial pressure on growth as well as electrical and optical properties of intrinsic indium oxide (In2O3) thin films was studied. High quality thin films were grown on quartz substrate by pulsed laser deposition (PLD) technique. Optical transmittances as well as electrical parameters such as electrical resistivity, carrier concentration, and mobility of these films depend on both oxygen pressure and growth temperature. A detailed study indicates that the films which are highly conducting and transparent correspond to an optimum growth temperature of 400 °C and an oxygen partial pressure of 1 × 10-6 bar. Higher transmittance (~90%), lower electrical resistivity (1.7 × 10-4 Ω.cm), and higher mobility (119 cm2V-1s-1) of PLD grown intrinsic In2O3 films compared with tin doped indium oxide (ITO) suggest that PLD grown In2O3 could be an excellent material for optoelectronic applications..

Keywords

Indium oxide, Pulsed laser deposition, Transparent electrode, Hall effect, Mobility.

Submitted at: May 25, 2007
Accepted at: July 15, 2007

Citation

R. K. GUPTA, N. MAMIDI, K. GHOSH, S. R. MISHRA, P. K. KAHOL, Growth and characterization of In2O3 thin films prepared by pulsed laser deposition, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 7, pp. 2211-2216 (2007)