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Growth and electrical properties of doped Bi4Ge3O12 single crystals

D. TONCHEVA1,*

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

The optimal conditions for Bi4Ge3O12 single crystals doped with Mn grown by the Czochralski technique have been established. The dielectric constant and the dielectric losses have been measured in the frequency range 102-105 Hz at temperatures of 300-600 K. Some studies of the a.c. conductivity and the behaviours of the real and imaginary parts of a.c. conductivity have been performed..

Keywords

Bi4Ge3O12 , Growth, Dielectric spectroscopy.

Submitted at: Nov. 28, 2006
Accepted at: Feb. 15, 2007

Citation

D. TONCHEVA, Growth and electrical properties of doped Bi4Ge3O12 single crystals, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 286-288 (2007)