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High-energy He+ ion beam induced modification in a-SiC:H

T. TSVETKOVA1,* , P. SELLIN2, R. CARIUS3, O. ANGELOV4, D. DIMOVA-MALINOVSKA4

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
  3. Institut fur Photovoltaik, Forshunszentrum Juelich GmbH 52452 Juelich, Germany
  4. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

The optical modification effect of high-energy (E=0.2-1.0 MeV) He+ ion implantation in hydrogenated silicon-carbon alloy (a-Si0.82C0.18:H) films has been studied, using optical transmission, reflection and photo-thermal deflection spectroscopy (PDS) measurements in the near ultra-violet (UV) and visible range of the spectrum. As a result of the implantation, a well expressed “darkening” effect (i.e. absorption edge shift to the lower-photon-energy region) has been registered. It is accompanied by a remarkable increase in the absorption coefficient of over one order of magnitude, depending on the ion dose and energy. This change can be attributed to considerable He+ ion beam induced structural transformations in the implanted hydrogenated silicon-carbon alloy films, as confirmed by additional Raman spectroscopy measurements..

Keywords

Ion implantation, Silicon carbide, Optical data storage, Raman spectroscopy.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

T. TSVETKOVA, P. SELLIN, R. CARIUS, O. ANGELOV, D. DIMOVA-MALINOVSKA, High-energy He+ ion beam induced modification in a-SiC:H, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 375-378 (2007)