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Highly efficient Er– and Yb – doped YAl3(BO3)4 laser materials: crystal growth and characterization

V. V. MALTSEV1, E. A. VOLKOVA1, N. I. LEONYUK2,* , N. A. TOLSTIK2, N. V. KULESHOV2

Affiliation

  1. Department of Crystallography & Crystallochemistry, Geological Faculty, Moscow State University 119991/GSP1 Moscow, Russian Federation
  2. Institute for Optical Materials and Technologies, Belarus National Technical University,Minsk, Belarus

Abstract

(Er,Yb):YAl3(BO3)4 single crystals have been obtained from K2Mo3O10 based fluxed melts. Also, 100 μm-thick Yb:YAl3(BO3)4 crystal layers were grown by liquid phase epitaxy method. Their growth rates varied from 1.5 to 10 μm/h in the supercooling range of 3–12.5 °C. The room temperature polarized absorption spectra of the layers were recorded and compared with those for Yb:YAl3(BO3)4 single crystals. Strong and broad absorption bands were observed at 976 nm with a peak absorption coefficient of about 14 cm-1. The emission lifetime of Yb3+ ions in both layers and bulk crystals was found to be 480 μs..

Keywords

Growth from high temperature solutions, Single crystal growth, Liquid phase epitaxy, Borates, Laser materials.

Submitted at: Sept. 1, 2008
Accepted at: Nov. 11, 2008

Citation

V. V. MALTSEV, E. A. VOLKOVA, N. I. LEONYUK, N. A. TOLSTIK, N. V. KULESHOV, Highly efficient Er– and Yb – doped YAl3(BO3)4 laser materials: crystal growth and characterization, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 11, pp. 2890-2893 (2008)