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ielectric, conductivity and modulus analysis of AuGe/SiO2/p-Si/AuGe capacitor

A. BÜYÜKBAŞ1, A. TATAROĞLU1,* , M. BALBAŞI2

Affiliation

  1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey
  2. Department of Chemical Engineering, Faculty of Engineering, Gazi University, Ankara, Turkey

Abstract

In this study, the dielectric, conductivity and modulus properties of AuGe/SiO2/p-Si/AuGe capacitor with interfacial thermal oxide layer were investigated using impedance measurements. These measurements were carried out in a wide frequency range. Dielectric parameters such as dielectric constant (ε'), loss (ε''), loss tangent (tan δ), ac conductivity (σac), and real (M') and imaginary (M'') component of complex electric modulus (M*) values were calculated from impedance measurements. Experimental results show that the values of dielectric parameters are a strong function of frequency..

Keywords

MOS capacitor; Dielectric parameters; Ac conductivity; Modulus.

Submitted at: June 2, 2014
Accepted at: June 24, 2015

Citation

A. BÜYÜKBAŞ, A. TATAROĞLU, M. BALBAŞI, ielectric, conductivity and modulus analysis of AuGe/SiO2/p-Si/AuGe capacitor, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 7-8, pp. 1134-1138 (2015)