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Improving light extraction efficiency in InGaN/GaN light-emitting diodes by backside metal coating

L. Z. HSIEH1,* , K. C. CHEN1

Affiliation

  1. Department of Electrical and Electronic Engineering, Chung-Cheng Institute of Technology, National Defense University, Tashi, Taoyuan 335, Taiwan, Republic of China

Abstract

GaN-based multiple-quantum well (MQW) light-emitting diodes (LEDs) of green light with thinning process and backside metal coating have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to optimum selection for kind and thickness of metals and more light output reflected upward by backside metal coating, the light extraction efficiency is greatly enhanced. These designed devices provide a simple and low-cost manufacture, thus improving the conventional device..

Keywords

Backside metal coating, Light extraction efficiency, GaN-based LEDs.

Submitted at: May 30, 2007
Accepted at: Aug. 18, 2007

Citation

L. Z. HSIEH, K. C. CHEN, Improving light extraction efficiency in InGaN/GaN light-emitting diodes by backside metal coating, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 8, pp. 2449-2451 (2007)