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Incorporation of nitrogen in melt grown GaAs♣

M. MILANOVA1, R. KAKANAKOV1, G. KOLEVA1, B. ARNAUDOV2, S. EVTIMOVA2, P. VITANOV3,* , E. GORANOVA3, VL. BAKARDJIEVA3, Z. ALEXIEVA3

Affiliation

  1. Central Laboratory of Applied Physics, 59 St.Petersrburg Blvd, 4000 Plovdiv, Bulgaria
  2. Faculty of Physics, Sofia University, 5 J.Bourchier Blvd, 1164 Sofia, Bulgaria
  3. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria

Abstract

Group III-V-nitrides, the so called dilute nitrides, are promising materials for multi-junction solar cells, telecommunications, heterojunction bipolar transistors and high frequency (THz) applications. The introduction of a tiny fraction (~1 %) of nitrogen in GaAs or GaP induces a decrease of the band gap energy and a deformation of the conduction band structure, which extends the range of its applicability. In the present work, we demonstrate the possibility of incorporating nitrogen in melt-grown GaAs layers. The dilute gallium arsenide-nitride layers were grown on GaAs substrates by liquid-phase epitaxy, using polycrystalline GaN as a source of nitrogen in the melt. Characterisation of the structural and electrical properties was done by XRD, XPS analysis, FTIR spectra and Hall effect measurements in the range 80-300K..

Keywords

GaAsN, Dilute nitrides, Liquid-phase epitaxy.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

M. MILANOVA, R. KAKANAKOV, G. KOLEVA, B. ARNAUDOV, S. EVTIMOVA, P. VITANOV, E. GORANOVA, VL. BAKARDJIEVA, Z. ALEXIEVA, Incorporation of nitrogen in melt grown GaAs♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1471-1474 (2009)