"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Influence of differently formed interfacial aluminium oxide on the structural properties of poly-Si films prepared by aluminium induced crystallisation

D. DIMOVA-MALINOVSKA1,* , H. NICHEV1, O. ANGELOV1, M. SENDOVA-VASSILEVA1, M. SENDOVA2, V. MIKLI3

Affiliation

  1. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. New College of Florida, 5700 N. Tamiami Trail, Sarasota, Fl 34243, USA
  3. Centre for Materials Research, Tallinn Technical University, Ehitajate tee 5, 19086 Tallinn, Estonia

Abstract

The influence of differently formed interfacial aluminium oxide layers on the structural properties of poly-Si thin films prepared by Aluminium Induced Crystallization (AIC) of a-Si:H is reported. The Al layers were deposited by evaporation or by magnetron sputtering on an unheated substrate or at a 300ºC substrate temperature (Ts). Different methods for preparation of the aluminium oxide were applied: exposure of the Al film to air or sputtering of an Al2O3 target. The Al oxide layer topographies were studied by AFM. The a-Si:H films were deposited by magnetron sputtering at Ts = 250 ºC. After annealing in H2, the poly-Si films were characterized by microprobe Raman spectroscopy and optical microscopy. The results indicate that poly-Si films prepared using evaporated Al precursors have larger crystallites than those prepared by sputtering. In the case of a sputtered Al precursor, Ts = 300 ºC is found to be more favorable for larger grain formation. The preparation of poly-Si films by AIC of glass/Al/Al2O3/a-Si:H stacks with a sputtered interfacial oxide is also demonstrated..

Keywords

Poly-Si, Aluminium Induced Crystallization, Interface oxide layer, Evaporation, Sputtering.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

D. DIMOVA-MALINOVSKA, H. NICHEV, O. ANGELOV, M. SENDOVA-VASSILEVA, M. SENDOVA, V. MIKLI, Influence of differently formed interfacial aluminium oxide on the structural properties of poly-Si films prepared by aluminium induced crystallisation, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 359-362 (2007)