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Influence of doping concentration on the properties of Ga doped CuO thin films by the spray pyrolysis technique

S. N. VIDHYA1,* , O. N. BALASUNDARAM2, M. CHANDRAMOHAN3

Affiliation

  1. Research & Development Centre, Bharathiar University, Coimbatore 641046, Tamilnadu, India Department of Physics, RVS Technical Campus – Coimbatore, Coimbatore 641402, Tamilnadu, India
  2. Department of Physics, PSG College of Arts and Science, Coimbatore – 641014, Tamilnadu, India
  3. Department of Physics, Vishnu Lakshmi College of Engineering & Technology, Coimbatore – 641111, Tamilnadu India

Abstract

Transparent thin films of pure and Ga doped CuO thin films were deposited on the glass plates at 450°C by spray pyrolysis technique. The various volumes of Ga precursor solution from 0.5, 1.0, 1.5 and 2.0 mlwere mixed with CuO precursor solution. The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and optical studies. X-ray diffraction patterns of pure and Ga doped CuO thin films reveal the polycrystalline nature and cubic structure. The surface morphology of the film is found to be influenced with the Ga doping. Optical transmittance and absorption studies were also recorded in the wavelength range 300 nm to 1100 nm. The band gap of the film is found to be decrease from 2.79eV to 2.24eV..

Keywords

Thin Films; Spray pyrolysis; SEM; Optical properties.

Submitted at: June 2, 2015
Accepted at: June 24, 2015

Citation

S. N. VIDHYA, O. N. BALASUNDARAM, M. CHANDRAMOHAN, Influence of doping concentration on the properties of Ga doped CuO thin films by the spray pyrolysis technique, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 7-8, pp. 963-967 (2015)