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Influence of noise mechanism on zero-bias resistance junction-area product in In0.53Ga0.47As photovoltaic infrared detector

YINGTIAN XU1, YING LI2, BEIHONG LONG3, YAN MA1, GUOTONG DU1, JINGZHI YIN1,*

Affiliation

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China
  2. Changchun Automobile Industry institute, 9999 Dongfeng street, Changchun, 130011, People’s Republic of China
  3. College of Materials Science and Engineering, Jinlin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China

Abstract

We theoretically analyze the effects of material parameters on the R0A product of In0.53Ga0.47As photovoltaic infrared detector by considering the four dominant noise mechanisms. The results show that R0A is mainly affected by generation-recombination mechanism at the carrier concentration<1015cm-3 for the triangular and parabolic potential barriers. Moreover, the effects of surface recombination velocity, its carrier concentration and thickness on R0A product have also been discussed. The influence of p-region material parameters on the R0A product is larger than that of the n-region. R0A>106(•cm2) at p=1017cm-3, R0A product of 108•cm2 (T=250K) and 106•cm2 (T=300K) are obtained..

Keywords

A. In0.53Ga0.47As PV detector, D. Noise mechanism, D. Zero-bias resistance junction-area product (R0A).

Submitted at: Nov. 26, 2012
Accepted at: March 13, 2014

Citation

YINGTIAN XU, YING LI, BEIHONG LONG, YAN MA, GUOTONG DU, JINGZHI YIN, Influence of noise mechanism on zero-bias resistance junction-area product in In0.53Ga0.47As photovoltaic infrared detector, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 276-282 (2014)