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O. M. OZKENDIR1,*
- Tarsus University, Department of Natural and Mathematical Sciences, Faculty of Engineering, 33400Tarsus, Turkey
ThGeO4(TGO) material is an actinide semiconductor with a wide bandgap. The influence of Sn substitution in the Ge coordinations has probed by the x-ray absorptionfine structure(XAFS) spectroscopy calculations. Calculations were performed for Th L3-edge and O K-edgeto study the influence of both Ge and the substituted Sn atoms on the electronicstructure of the thorium atoms.ThO2material's calculation has beenused as reference material during the analysisandthe analysis have shown that unoccupied 6dlevels of the Th atoms’ were hybridized with 2p levels of the oxygen to build up molecular bands..
Actinides,Thorium,Semiconductors, Absorption spectroscopy.
Submitted at: July 1, 2020
Accepted at: April 8, 2021
O. M. OZKENDIR, Influence of Sn substitution on the electronic structure of ThGeO4 semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 3-4, pp. 193-198 (2021)
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