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Influence of the a-Si:H interfacial region defects on the quasi-static capacitance of Metal/c-Si/SiO2/a-Si:H structures

N. NEDEV1,* , E. MANOLOV2, B. PANTCHEV2, TS. IVANOV2, R. DURNÝ3, V. NÁDAŽDY4

Affiliation

  1. Instituto de Ingenieria,Universidad Autónoma de Baja California, Benito Juárez Blvd., s/n, C.P. 21280, Mexicali, Baja California, México
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Department of Physics, FEI Slovak Technical University, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
  4. Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 842 28 Bratislava, Slovak Republic

Abstract

Metal/crystalline silicon/silicon dioxide/hydrogenated amorphous silicon structures (M/c-Si/SiO2/a-Si:H) are fabricated by thermal oxidation of n+ doped crystalline Si followed by PECVD deposition of an a-Si:H film. The quasi-static capacitance-voltage (qs C-V) dependencies of the structures are measured using a modification of the standard qs C-V method, which allows reduction of the influence of a-Si:H transient currents. It is shown that the change in the qs C-V curve of the sample caused by thermal annealing with an applied bias can be explained using the defect-pool model for the defects in the a-Si:H. Therefore, the information obtained by qs C-V measurements can be used to characterize the defects close to the insulator/semiconductor interface in PECVD hydrogenated amorphous silicon..

Keywords

a-Si:H thin films, density of states, PE-CVD, quasi-static C-V.

Submitted at: Nov. 28, 2006
Accepted at: Feb. 15, 2007

Citation

N. NEDEV, E. MANOLOV, B. PANTCHEV, TS. IVANOV, R. DURNÝ, V. NÁDAŽDY, Influence of the a-Si:H interfacial region defects on the quasi-static capacitance of Metal/c-Si/SiO2/a-Si:H structures, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 352-354 (2007)