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Influence of the hydrogenation on the physical properties of Si-doped ZnO films in the application of transparent conducting oxides

A. A. DAKHEL1,*

Affiliation

  1. Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhir, Kingdom of Bahrain

Abstract

ZnO doped with different amounts of Si ions (ZnO: Si) nano-composite films deposited on glass substrates has been prepared by vapor deposition technique. The influences of Si-doping on the structural and optical properties have been studied. The crystalline structure was gradually deteriorated by increasing the Si- contents. The prepared films were annealed in a hydrogen atmosphere to study the effects on the properties. It was found that the hydrogenation accelerated the crystalline disorder. The conduction parameters were concluded. The carrier concentration of the host ZnO was increased by ~ 46 % by increasing the Si- content by ~ 4.7at %..

Keywords

Si-doped zinc oxide, ZnO thin films, Hydrogenation.

Submitted at: March 3, 2021
Accepted at: Feb. 11, 2022

Citation

A. A. DAKHEL, Influence of the hydrogenation on the physical properties of Si-doped ZnO films in the application of transparent conducting oxides, Journal of Optoelectronics and Advanced Materials Vol. 24, Iss. 1-2, pp. 35-40 (2022)