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Influence of the phosphorous precursors on the structure and properties of the SiO2-P2O5 sol-gel films

C. VASILIU1,* , C. GRIGORESCU1, G. PAVELESCU1, L. PREDOANA2, L. TODAN2, M. GARTNER2, M. ANASTASESCU2, C. NEGRILA3, C. LOGOFATU3, A. MOLDOVAN4, M. ZAHARESCU2

Affiliation

  1. National Institute of of Research and Development for Optoelectronics-INOE 2000, Department of Optospintronics, Atomistilor Str. 1, P.O.Box MG - 5, RO-77125,Magurele-Bucharest, Romania
  2. Institute of Physical Chemistry „Ilie Murgulescu”, Spl. Independentei 202, P.O. Box 12-194, 060021 Bucharest, Romania
  3. National Institute for Materials Physics, Str. Atomostilor Nr. 105 bis, PO BOX MG 7, RO-77125, Bucharest Romania
  4. NILPRP, PO Box MG-16, RO 77125 Magurele Bucharest, Romania

Abstract

Thin films in the SiO2-P2O5 system are intensely studied due to their applications in microelectronics, sensing, nanophotonics, optoelectronics and as ionic conductors. Sol-gel is the most used method for preparation of such films. Previous studies established the very low reactivity of the phosphorous alkoxides and the high tendency of the phosphorous oxide to volatilise at thermal treatment. In order to identify the most appropriate precursor for obtaining layers with desired composition and properties a systematic study of the sol-gel film preparation using different phosphorous precursors was carried out. The films were deposited on ITO/SiO2 coated glass substrates at room temperature. To check the influence of the type of precursors on the layers thermal stability and properties a post deposition annealing was performed at temperatures of 150 and 2000C. The film characterization was carried out using various techniques as Spectroscopic Ellipsometry (SE), X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR)..

Keywords

SiO2-P2O5, Thin films, Sol-gel, Spectroscopic Ellipsometry, XPS, FTIR.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

C. VASILIU, C. GRIGORESCU, G. PAVELESCU, L. PREDOANA, L. TODAN, M. GARTNER, M. ANASTASESCU, C. NEGRILA, C. LOGOFATU, A. MOLDOVAN, M. ZAHARESCU, Influence of the phosphorous precursors on the structure and properties of the SiO2-P2O5 sol-gel films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1407-1410 (2007)