"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles

N. NEDEV1,* , D. NESHEVA2, E. MANOLOV2, R. BRÜGGEMANN3, S. MEIER3, K. KIRILOV4, Z. LEVI2

Affiliation

  1. Instituto de Ingenieria, Universidad Autónoma de Baja California, Benito Juárez Blvd., s/n, C.P. 21280, Mexicali, Baja California, México
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria.
  3. Institute of Physics, Carl von Ossietzky University Oldenburg, D-26111 Oldenburg, Germany
  4. Department of Solid State Physics and Microelectronics, Sofia University "St. Kliment Ohridski", 5 James Bourchier, 1164 Sofia, Bulgaria

Abstract

Silicon nanocrystals embedded in a SiO2 matrix are fabricated by thermal annealing of Metal/SiO2/SiOx/c-Si structures (x=1.15) at 1000 oC in N2 atmosphere for 30 or 60 min. High frequency C-V measurements demonstrate that both types of sample can be charged negatively or positively by applying a positive or negative bias voltage to the gate. The clockwise hysteresis windows of 30 and 60 min annealed samples are about 7 and 5.5 V for the ±12 V scanning range (Eox = ±2.4 MV/cm), respectively. Although the samples annealed for 60 min have a smaller hysteresis window, they have two important advantages compared to the 30 min annealed ones: a lower defect density at the c-Si wafer/SiO2 interface and a smaller value of the fixed oxide charge close to this interface..

Keywords

Nanocrystals, Memory devices, High frequency C-V dependencies.

Submitted at: Nov. 1, 2006
Accepted at: Jan. 15, 2007

Citation

N. NEDEV, D. NESHEVA, E. MANOLOV, R. BRÜGGEMANN, S. MEIER, K. KIRILOV, Z. LEVI, Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 1, pp. 182-185 (2007)