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Influence of thermal annealing temperature on electrical properties of Rh and Rh/Au Schottky contacts to n-type GaN

V. RAJAGOPAL REDDY1,* , N. RAMESHA REDDY1

Affiliation

  1. Department of Physics, Sri Venkateswara University, Tirupati-517 502, India

Abstract

The effects of thermal annealing temperature on electrical characteristics of rhodium (Rh) and rhodium/gold (Rh/Au) Schottky contacts to n-type GaN (nd=4.07×1017 cm-3) have been investigated by current-voltage (I-V) and capacitancevoltage (C-V) techniques. Measurements showed the barrier height of as-deposited Rh Schottky contact is 0.60 eV (I-V) and 0.98 eV (C-V) respectively. However, the Schottky barrier height is somewhat decreased upon annealing at 500 °C, reaching values of 0.51 eV (I-V) and 0.65 eV (C-V). The Schottky barrier height of as-deposited Rh/Au is found to be 0.57 eV (I-V) and 0.62 eV (C-V). However, the Schottky barrier height increased with annealing temperature up to 500 °C, reaching maximum values of 0.84 eV (I-V) and 1.05 eV (C-V). Significant improvement in the electrical characteristics in the case of Rh/Au Schottky contact is observed upon annealing temperature compared to the Rh Schottky contact. The Rh Schottky contact is relatively stable during annealing temperatures compared with that of Rh/Au Schottky contact..

Keywords

Schottky barrier height, Schottky diode, Electrical properties, n-type GaN, I-V and C-V techniques.

Submitted at: July 25, 2007
Accepted at: Dec. 7, 2007

Citation

V. RAJAGOPAL REDDY, N. RAMESHA REDDY, Influence of thermal annealing temperature on electrical properties of Rh and Rh/Au Schottky contacts to n-type GaN, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 12, pp. 3871-3876 (2007)