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InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection

J. ZAVADIL1,* , O. PROCHAZKOVA1, K. ZDANSKY1, P. GLADKOV1

Affiliation

  1. Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic, Chaberská 57, 182 51 Praha 8, Czech Republic

Abstract

InP single crystal layers were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with Ce, Pr, Tm, Tm2O3 and Yb additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spectroscopy, C-V and temperature dependent Hall measurements. An efficient purification due to rare earth (RE) admixture has been observed and all reported layers exhibit the change of electrical conductivity from n to p at certain RE concentration in the melt. The highest purifying effect has been found for Pr and Tm2O3, where the impurity concentration was decreased by up to three orders of magnitude and fine luminescence spectral features were revealed. Ce and Yb were found as dominant acceptor impurities responsible for n to p type electrical conductivity change, while the dominant acceptor responsible for the conductivity crossover in the case of Tm and Tm2O3 admixtures remains to be identified..

Keywords

Rare-earth elements, InP epitaxial layers, Hall measurements, Low-temperature photoluminescence.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

J. ZAVADIL, O. PROCHAZKOVA, K. ZDANSKY, P. GLADKOV, InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1221-1226 (2007)