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Intersubband transitions under strong screening effect of free carriers in the step doped InGaN/GaN Quantum Well

H. R. ALAEI1,* , R. RIEDEL2, M. YOUNESI3

Affiliation

  1. Department of Physics, Varamin-Pishva Branch, Islamic Azad University, Varamin, Iran
  2. Department of Material Science, Darmstadt University of technology, Darmstadt, Germany
  3. Department of Physics, Vali-e-Asr University of Rafsanjan, Rafsanjan, Iran

Abstract

We report on the intersubband transitions at different temperatures in the InGaN/GaN Quantum Well (QW) where they have two couple thick layers with step doping around their active region. These couple step doped layers by strong screening effect of free carriers can reduce the Quantum Confined Stark Effect (QCSE) induced by strain in the QW then blue shifts as large as 70 meV for intersubband transitions is observed at room temperature. The such improvement in optical property is attributed to an increase in the injection of electrons from Si step-doped GaN barrier layers into the well also increase in the hole accumulation due to higher valance band offset of barriers. In theory, for subband calculations we solved Schrödinger-Poisson equations self-consistently by numerov method where the Exchange–correlation, Hartree interaction and internal electric fields were considered for accurate subbands calculation..

Keywords

Intersubband, Transition, Quantum Well, InGaN/GaN, Self-consistent, Photoluminescence.

Submitted at: July 29, 2011
Accepted at: Jan. 22, 2014

Citation

H. R. ALAEI, R. RIEDEL, M. YOUNESI, Intersubband transitions under strong screening effect of free carriers in the step doped InGaN/GaN Quantum Well, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 1-2, pp. 25-30 (2014)