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Investigation of bio-organic/inorganic semiconductor interfaces

D. R. T. ZAHN1,* , S. SEIFERT1, G. GAVRILA1, W. BRAUN2

Affiliation

  1. Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany
  2. BESSY GmbH, Albert-Einstein-Str. 15, D-12489 Berlin, Germany

Abstract

Layers of the DNA bases adenine, cytosine, and guanine of 1 nm and 10 nm thickness were deposited onto hydrogen passivated Si(111)7x7 surfaces. Valence band photoemission spectra (VB PES) of these layers were recorded at excitation energies of 55 eV and 150 eV. The VB PES offer access to the alignment of energy levels at the interface between the DNA base layers and the Si substrates. Additionally, quantitative conclusions about the structural properties (i.e. the growth mode) can be drawn. The average tilt angle of the DNA base molecules with respect to the substrate surface were determined by angular depended near edge x-ray absorption fine structure (NEXAFS) spectroscopy..

Keywords

DNA bases, Inorganic semiconductor, NEXAFS spectroscopy.

Submitted at: Nov. 15, 2006
Accepted at: March 15, 2007

Citation

D. R. T. ZAHN, S. SEIFERT, G. GAVRILA, W. BRAUN, Investigation of bio-organic/inorganic semiconductor interfaces, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 3, pp. 522-526 (2007)