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Investigation of p-GaAs/n-Cd1-xZnxS1-yTey/Cd1-xZnxO heterojunctions deposited by electrochemical deposition

H. M. MAMEDOV1,* , V. U. MAMEDOV1, V. J. MAMEDOVA1, KH. M. AHMADOVA1

Affiliation

  1. Department of Physical Electronics, Faculty of Physics, Baku State University, 370148, Z.Khalilov str., 23, Baku, Azerbaijan

Abstract

p-GaAs/n-Cd1-xZnxS1-yTey anisotype heterojunction without and with Cd1-xZnxO oxide films have been fabricated by preparing of n-type Cd1-xZnxS1-yTey thin films onto the p-GaAs single crystal wafers using an electrochemical deposition method. Cadmium sulfate, zinc sulfate, sodium thiosulfate and tellurium oxide used as a cadmium, zinc, sulfur and tellurium ion in solution, respectively. The voltammetric behavior of the Cd1-xZnxS1-yTey thin films on GaAs substrate from aqueous solutions was studied. Film’s studies were carried out using UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF) and atomic force microscopy (AFM). The electrical characterization of p-GaAs/n-Cd1-xZnxS1-yTey heterojunction was performed using current-voltage (J-V) and capacitance-voltage (C-V) measurements. It is established that heat treatment (HT) at 350-3900С during 8-14 min in argon atmosphere reduces the concentration of defects, results in formation of heterojunctions and minimum values of non-ideality factor of J-V characteristics. Under AM1.5 conditions the open-circuit voltage, short-circuit current, fill factor and efficiency of our best cells with Cd1-xZnxO films, were Voc = 584 mV, Jsc = 14.54 mA/cm2, FF = 0.6 and η = 6.7 %, respectively..

Keywords

Electrochemical deposition, Thin film, Heterojunctions, Heat treatment.

Submitted at: April 26, 2013
Accepted at: Jan. 21, 2015

Citation

H. M. MAMEDOV, V. U. MAMEDOV, V. J. MAMEDOVA, KH. M. AHMADOVA, Investigation of p-GaAs/n-Cd1-xZnxS1-yTey/Cd1-xZnxO heterojunctions deposited by electrochemical deposition, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 1-2, pp. 67-73 (2015)