"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Investigations of AlSb thin films grown on Si by liquid phase epitaxy

A. A. M. FARAG1,* , A. ASHERY2, F. S. TERRA2, G. M. MAHMOUD2

Affiliation

  1. Thin Film laboratory ,Physics Department,Faculty of Education ,Ain Shams University , Cairo, Roxy, Heliopolis, Egypt, 11757
  2. Physics Department , National Research Center , Dokki, Cairo,Egypt

Abstract

Heterojunctions devices of n-AlSb/p-Si were fabricated by growing n-AlSb films onto p-type Si single crystal waferes using liquid phase epitaxy (LPE) . The X-ray diffraction studies indicate that all films were monocrystalline with single AlSb phase and showing one significant peak oriented along the (111) direction with cubic structure. Current – voltage (I-V) and capacitance – voltage (C-V) measurements were performed to determine the electrical characteristics of these structures. Rectifying properties were obtained, which are definitely of the diode type . The analysis of the dark I-V characteristics of n- AlSb/p-Si at several temperatures with respect to the elucidation of conduction mechanisms and evaluation of the heterojunction parameters is presented . The forward current increases exponentially with the applied voltage at low voltaje region ,which was dominated by the thermionic emission over the n-AlSb/p-Si whereas at high voltage region the process is dominated by the series resistance . The carrier transport mechanism was considered to be mainly generation and recombination of carriers in the p-Si substrate under the reverse bias . Information on the and the built – in potential and other important junction parameters can be sucsesfully obtained by studying the dark C-V measurements at 1 MHz. Discussion of the obtained results and their comparison with the previous published data are also given..

Keywords

AlSb, Heterojunctions, Liquid phase epitaxy, Silicon.

Submitted at: April 3, 2008
Accepted at: Oct. 7, 2008

Citation

A. A. M. FARAG, A. ASHERY, F. S. TERRA, G. M. MAHMOUD, Investigations of AlSb thin films grown on Si by liquid phase epitaxy, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2713-2718 (2008)