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Ion beam synthesis of AlN nanostructured thin films

E. VALCHEVA1,* , D. MANOVA1, S. MÄNDL2, S. ALEXANDROVA3, J. LUTZ2, S. DIMITROV3

Affiliation

  1. Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
  2. Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
  3. Department of Applied Physics, Technical University, 8 Kl. Ohridski Blvd., 1797 Sofia, Bulgaria

Abstract

The possibility of thin AlN film formation in SiO2/Si by sequential implantation of Al and N using a plasma ion immersion implantation is reported. The ion profiles in the silicon dioxide substrate are evaluated through Monte Carlo simulations. The chemical composition and the nature of the chemical bonds are determined by Raman spectroscopy. The formation of randomly oriented nanoclusters of h-AlN is detected, without thermal annealing. The formation energies of Al-N, Al-O, Si-O and Si-N bonds are taken into consideration, in discussing the nanoclustering of the implanted species to form nanostructured AlN films..

Keywords

AlN, Ion beam synthesis, Ion profiles, Nanoclustering.

Submitted at: Nov. 1, 2006
Accepted at: Jan. 15, 2007

Citation

E. VALCHEVA, D. MANOVA, S. MÄNDL, S. ALEXANDROVA, J. LUTZ, S. DIMITROV, Ion beam synthesis of AlN nanostructured thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 1, pp. 166-169 (2007)