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Iridium layer as oxygen barrier and growth substrate for oriented PZT thin films

L. TRUPINA1,* , C. MICLEA1, C. TANASOIU1, L. AMARANDE1, C. T. MICLEA1, M. CIOANGHER1

Affiliation

  1. National Institute for Materials Physics (NIMP) Laboratory of Oxidic Materials, Romania

Abstract

Iridium thin films, grown by RF sputtering method and their behaviour as oxygen diffusion barrier were investigated. The growth of oriented PZT thin films on Ir barrier layer is also discussed. Sheet resistance was measured for Ir/SiO2/Si samples annealed in O2 for 15 min. at temperatures up to 750 oC. The electrical resistivity of Ir film decreases with increasing annealing temperatures due to a better crystallization. PZT films deposited by RF sputtering method on Ir(111) by means of a 2 nm thick TiO2 seed layer grow almost perfectly in (111) orientation (98% texture index). Ir layer can be used as a barrier layer in stacked capacitor FRAM’s and it also allows the growth of oriented PZT thin films..

Keywords

Ferroelectric, Thin films, Barrier layer, Non-volatile memories, Iridium layer, PZT films.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

L. TRUPINA, C. MICLEA, C. TANASOIU, L. AMARANDE, C. T. MICLEA, M. CIOANGHER, Iridium layer as oxygen barrier and growth substrate for oriented PZT thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1508-1510 (2007)