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Kinetics of O and H atoms in pulsed O2/HMDSO low pressure PECVD plasmas

A. BOUSQUET1, A. GRANIER2,* , G. CARTRY3, A. GOULLET2

Affiliation

  1. LMI, CNRS-Université Blaise Pascal, 24 avenue des Landais, 63177 Aubières, France
  2. IMN, CNRS-Université de Nantes, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
  3. PIIM, CNRS-Université de Provence, Centre Scientifique de St Jérôme ,Case 232, 13397 Marseille cedex 20, France

Abstract

The O and H atom kinetics in a low pressure inductively coupled radiofrequency O2/Hexamethyldisiloxane and water vapour pulsed plasma is investigated by Time-Resolved Optical Emission Spectroscopy. The O and H-atom loss coefficients in the post-discharge of O2/HMDSO pulsed plasmas were measured to be 210-3 and 3.10-4 respectively. Such low recombination coefficients, as compared to the ones measured in oxygen plasmas (≈ 10-2), are attributed to the adsorption of OH and H2O at the reactor walls which limits the O and H atom recombination. O and H atoms are likely to be responsible for HMDSO dissociation and subsequent film deposition during the post-discharge..

Keywords

Pulsed plasma, PECVD, Time-resolved emission, HMDSO, O-atom kinetics.

Submitted at: March 1, 2008
Accepted at: July 10, 2008

Citation

A. BOUSQUET, A. GRANIER, G. CARTRY, A. GOULLET, Kinetics of O and H atoms in pulsed O2/HMDSO low pressure PECVD plasmas, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 8, pp. 1999-2002 (2008)