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Large area InGaAs/GaAs resonant cavity enhanced photodetector for sensor application

B. K. JEONG1, Y. M. SONG1, V. V. LYSAK1, Y. T. LEE1,*

Affiliation

  1. Gwangju Institute of Science and Technology, Gwangju, Republic of Korea

Abstract

This study deals with the fabrication and characterization of large area InGaAs/GaAs resonant cavity enhanced photodetector (RCEPD) based on intra-cavity 980 nm vertical cavity surface emitting laser (VCSEL) structure for sensor applications. To incorporate RCEPDs for sensor applications, RCEPD’s with reasonable full width half maximum (FWHM) and high quantum efficiency are necessary. Therefore, we designed symmetric and asymmetric contact layer structure RCEPD’s having 5 top DBR pairs and different sensitive area sizes. Asymmetric contact layer structure RCEPD showed slightly higher quantum efficiency, reduced FWHM, reduced 3dB bandwidth and a higher resistance than that of symmetric contact layer structure RCEPD..

Keywords

Resonant cavity enhanced photodetector, RCEPD, InGaAs/GaAs photodetector, Large sensitive area.

Submitted at: April 10, 2008
Accepted at: Oct. 7, 2008

Citation

B. K. JEONG, Y. M. SONG, V. V. LYSAK, Y. T. LEE, Large area InGaAs/GaAs resonant cavity enhanced photodetector for sensor application, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2547-2554 (2008)