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Linear and nonlinear intraband optical absorption in (In,Ga)N spherical QD: effects of In-concentration, optical Intensity, size and impurity

HADDOU EL GHAZI1,2,* , A. JORIO1, I. ZORKANI1

Affiliation

  1. LPS Faculty of science, Dhar El Mehrez, BP 1796 Fes-Atlas, Morocco
  2. Special mathematics, CPGE My Youssef, Rabat, Morocco

Abstract

The linear, third-order nonlinear and total intrasubband optical absorption coefficients ACs of 1s-1p, 1p-1d and 1f-1d transitions with and without hydrogenic shallow-donor impurity in wurtzite (In,Ga)N/GaN spherical quantum dot (SQD) are reported. Incident optical intensity, QD radius and potential barrier effects are investigated. The calculations are performed within the framework of single band effective-mass approximation using a combination of Quantum Genetic Algorithm (QGA) and Hartree-Fock-Roothaan (HFR) method. Our results show that: (i) a critical value of the incident optical intensity is obtained which constitutes a turning point of two intensities behaviors and (ii) a significant blue shift of the resonant peaks of optical ACs is observed under the In-composition, the QD radius and the presence of the impurity..

Keywords

Quantum Dot, Optical absorption, InGaN.

Submitted at: Jan. 5, 2014
Accepted at: Nov. 13, 2014

Citation

HADDOU EL GHAZI, A. JORIO, I. ZORKANI, Linear and nonlinear intraband optical absorption in (In,Ga)N spherical QD: effects of In-concentration, optical Intensity, size and impurity, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 11-12, pp. 1242-1246 (2014)